4.6 Article

Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition

期刊

MATERIALS RESEARCH BULLETIN
卷 57, 期 -, 页码 47-51

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2014.05.020

关键词

Structural materials; Thin films; Laser deposition; Optical properties; X-ray diffraction

资金

  1. NSERC (the Natural Science and Engineering council) of Canada
  2. FQRNT (le Fonds Quebecois de la Recherche sur la Nature et les Technologies)
  3. Ministry of Higher Education, Scientific Research and Technology of Tunisia

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Pulsed laser deposition has been successfully used to achieve in-situ nitrogen doping of zinc oxide thin films at a temperature as low as 300 degrees C. Nitrogen-doped zinc oxide (ZnO:N) thin films with a maximum nitrogen content of 0.7 at.% were obtained by varying the nitrogen background pressure in the range of 0-150 mTorr. The ZnO:N thin films were found to present hexagonal crystalline structure with dense and smooth surface. X-ray photoelectron spectroscopy analysis confirms the effective incorporation of nitrogen into ZnO thin films. Optical transmission together with room temperature photoluminescence measurements show that the band gap of the ZnO:N films shifts from 3.3 eV to 3.1 eV as nitrogen concentration varies in the range of 0.2-0.7 at.%. The narrower band gap is obtained at an optimal nitrogen concentration of 0.22 at.%. This band gap narrowing is found to be caused by both nitrogen incorporation and nitrogen-induced defects in the ZnO:N films. (C) 2014 Elsevier Ltd. All rights reserved.

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