4.6 Article

Band alignment of ultra-thin hetero-structure ZnO/TiO2 junction

期刊

MATERIALS RESEARCH BULLETIN
卷 51, 期 -, 页码 141-144

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2013.12.013

关键词

Interfaces; Oxides; Sputtering; Photoelectron spectroscopy

资金

  1. National Natural Science Foundation of China [60876047, 60976054]

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The band alignment at the ZnO/TiO2 hetero-structure interface was measured by high resolution X-ray photoelectron spectroscopy. The valence band offset (E-ZnO - E-TiO2)(Valence) was linearly changed from 0.27 to 0.01 eV at the interface with increased ZnO coating thickness from 0.7 to 7 nm. The interface dipole presented at the ZnO/TiO2 interface was responsible for the decreased band offset. The band alignment of the ZnO/TiO2 heterojunction is a type II alignment. (C) 2013 Elsevier Ltd. All rights reserved.

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