期刊
MATERIALS RESEARCH BULLETIN
卷 47, 期 9, 页码 2673-2675出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2012.05.054
关键词
Oxides; Epitaxial growth; X-ray diffraction; Defects; Electrical properties
资金
- National Key Basic Research Program [2011CB302000]
- National Science Foundation of China [10974262]
- Fundamental Research Funds for the Central Universities [11lgpy16]
- Pearl River Rising Star Program [2011J2200096]
High quality ZnO epilayer with background electron concentration as low as 2.6 x 10(14) cm(-3) was obtained by plasma-assisted MBE on c-sapphire using a thin Mg film as the buffer layer. High-resolution XRD measurement shows a sharp (0 0 2) peak with full width at half maximum (FWHM) of only 0.029 degrees. Photoluminescence spectroscopy presents a weak defect-related near-edge emission. A metal-semiconductor-metal (MSM) typed photodetector based on the material demonstrates a response of similar to 43 A/W under the bias of 1 V and an ON/OFF ratio of 10(4). This un-doped ZnO with ultra-low background electron concentration could be a promising starting material for p-type doping. (c) 2012 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据