4.6 Article Proceedings Paper

Growth and characterization of periodically polarity-inverted ZnO structures on sapphire substrates

期刊

MATERIALS RESEARCH BULLETIN
卷 47, 期 10, 页码 2875-2878

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2012.04.044

关键词

Semiconductor; Thin films; Epitaxial growth; Atomic force microscopy

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We report on the fabrication and characterization of periodically polarity inverted (PPI) ZnO heterostructures on (0 0 0 1) Al2O3 substrates. For the periodically inverted array of ZnO polarity, CrN and Cr2O3 polarity selection buffer layers are used for the Zn- and O-polar ZnO films, respectively. The change of polarity and period in fabricated ZnO structures is evaluated by diffraction patterns and polarity sensitive piezo-response microscopy. Finally, PPI ZnO structures with subnanometer scale period are demonstrated by using holographic lithography and regrowth techniques. (C) 2012 Elsevier Ltd. All rights reserved.

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