Optical and electrical transport properties of ZnO/MoS2 heterojunction p-n structure

The MoS2/ZnO and MoS2/Si heterojunction structures were fabricated by thermal evaporation and sol-gel methods. The crystal structures properties of MoS2/ZnO and MoS2/Si were characterized by X-ray diffraction (XRD) pattern, Raman spectroscopy, and transmission electron microscope (TEM). The XRD and Raman spectroscopy results indicate that the n-MoS2 film was successfully grown on p-doped ZnO or Si. The TEM images of MoS2/ZnO and MoS2/Si heterojunction structures shows the MoS2 stacking layer-by-layer covalented by van der Waals (vdW) force. The current-voltage (I-V) measurement shows the rectifying behavior of the heterojunction structures. The photoconductivity and photoresponsivity properties explore its carrier kinetic decay process. The results shows the potential applicability of MoS2/ZnO and MoS2/Si heterojunction structures as optoelectronic devices.