4.6 Article

Epitaxial growth and interface strain coupling effects in manganite film/piezoelectric-crystal multiferroic heterostructures

期刊

MATERIALS CHEMISTRY AND PHYSICS
卷 133, 期 1, 页码 42-46

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2011.12.019

关键词

Thin film; Epitaxial growth; Electronic characterisation; Transport properties

资金

  1. NSFC/RGC [N_PolyU501/08]
  2. PolyU [G-U846]
  3. Center for Smart Materials of the Hong Kong Polytechnic University
  4. National Basic Research Program of China (973 Program) [2009CB623304]
  5. NSFC [90922026, 50832007, 51172259, 11090332]

向作者/读者索取更多资源

We constructed multiferroic structures by epitaxially growing colossal magnetoresistive La0.7Sr0.3MnO3 (LSMO) thin films on piezoelectric single-crystal substrates of composition 0.67Pb(Mg1/3Nb2/3)O-3-0.33PbTiO(3) (PMN-PT). Due to the efficient elastic coupling at the interface, the electric-field-induced piezoelectric strain (epsilon(piezo)) in the PMN-PT substrate is effectively transferred. to the LSMO film, giving rise to a remarkable modulation of the lattice strain, resistivity, and Curie temperature T-C of the LSMO film. Particularly, it was found that the magnetic field has an opposite effect on the strain-tunability of resistivity above and below T-C. Moreover, we found that the resistivity of the film is most sensitive to epsilon(piezo) near T-C and becomes less sensitive to epsilon(piezo) when the temperature is lower or higher than T-C. These, together with the well fitted resistivity data into a phenomenological model based on coexisting phases, demonstrate that the phase separation is crucial to understand the strain-mediated multiferroic properties in manganite film/PMN-PT structures. (C) 2011 Elsevier B.V. All rights reserved.

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