Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

标题
Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (100) substrates by MOCVD method
作者
关键词
β-Ga, 2, O, 3, film, Growth pressure, Preferred orientation, MOCVD
出版物
APPLIED SURFACE SCIENCE
Volume 325, Issue -, Pages 258-261
出版商
Elsevier BV
发表日期
2014-11-21
DOI
10.1016/j.apsusc.2014.11.074

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