4.7 Article

Oxidizing annealing effects on VO2 films with different microstructures

期刊

APPLIED SURFACE SCIENCE
卷 345, 期 -, 页码 232-237

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2015.03.044

关键词

VO2 films; Microstructrues; Electrical property; Optical modulation

资金

  1. National Natural Science Foundation of China [51372024]
  2. National High Technology Research and Development Program of China (863 Program) [2012AA03A706]
  3. Key Project of Chinese Ministry of Education [313007]

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Vanadium dioxide (VO2) films have been prepared by direct-current magnetron sputter deposition on m-, alpha-, and r-plane sapphire substrates. The obtained VO2 films display different microstructures depending on the orientation of sapphire substrates, i.e. mixed microstructure of striped grains and equiaxed grains on m-sapphire, big equiaxed grains on a-sapphire and fine-grained microstructure on r-sapphire. The VO2 films were treated by the processes of oxidation in air. The electric resistance and infrared transmittance of the oxidized films were characterized to examine performance characteristics of VO2 films with different microstructures in oxidation environment. The oxidized VO2 films on m-sapphire exhibit better electrical performance than the other two films. After air oxidization for 600 s at 450 degrees C, the VO2 films on m-sapphire show a resistance change of 4 orders of magnitude over the semiconductor-to-metal transition. The oxidized VO2 films on a-sapphire have the highest optical modulation efficiency in infrared region compared to other samples. The different performance characteristics of VO2 films are understood in terms of microstructures, i.e. grain size, grain shape, and oxygen vacancies. The findings reveal the correlation of microstructures and performances of VO2 films, and provide useful knowledge for the design of VO2 materials to different applications. (C) 2015 Elsevier B.V. All rights reserved.

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