期刊
LASER & PHOTONICS REVIEWS
卷 8, 期 2, 页码 L13-L17出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.201300142
关键词
light absorber; black silicon; atomic layer deposition; ICP-RIE; spectroscopy; silicon nanostructures
资金
- Emmy Noether program by the German Research Foundation (DFG) [SZ 253/1-1]
An ultra-black (A > 99%) broadband absorber concept on the basis of a needle-like silicon nanostructure called Black Silicon is proposed. The absorber comprises Black Silicon established by inductively coupled plasma reactive ion etching (ICP-RIE) on a highly doped, degenerated silicon substrate. Improved absorbers also incorporate an additional oxide capping layer on the nanostructures and reach an absorptance of A > 99.5% in the range of 350 to 2000nm and A approximate to 99.8% between 1000 and 1250nm. Fabrication of the absorbers is consistent with CMOS standards and requires no lithography. (Picture: Kasper, Friedrich-Schiller-University Jena)
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