Deep GaN etching by inductively coupled plasma and induced surface defects

标题
Deep GaN etching by inductively coupled plasma and induced surface defects
作者
关键词
-
出版物
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 28, Issue 5, Pages 1226-1233
出版商
American Vacuum Society
发表日期
2010-09-04
DOI
10.1116/1.3478674

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search