Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors

标题
Ferroelectric properties of Bi3.25La0.75Ti3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors
作者
关键词
-
出版物
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 26, Issue 5, Pages 1178-1181
出版商
American Vacuum Society
发表日期
2008-09-13
DOI
10.1116/1.2960555

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