GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass
出版年份 2015 全文链接
标题
GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 107, Issue 12, Pages 122107
出版商
AIP Publishing
发表日期
2015-09-24
DOI
10.1063/1.4931459
参考文献
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