标题
Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 107, Issue 25, Pages 252103
出版商
AIP Publishing
发表日期
2015-12-24
DOI
10.1063/1.4938123
参考文献
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- (2015) Maria Barbara Maccioni et al. Applied Physics Express
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- (2013) Bonna K. Newman et al. JOURNAL OF APPLIED PHYSICS
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- (2013) Masataka Higashiwaki et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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- (2012) David J. Comstock et al. CHEMISTRY OF MATERIALS
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