期刊
APPLIED PHYSICS LETTERS
卷 107, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4927602
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资金
- Natural Sciences and Engineering Research Council of Canada (NSERC)
- U.S. Army Research Office [W911NF-12-1-0477]
We have investigated the molecular beam epitaxial growth and characterization of nearly defect-free AlGaN nanowire heterostructures grown directly on Si substrate. By exploiting the Anderson localization of light, we have demonstrated electrically injected AlGaN nanowire lasers that can operate at 262.1 nm. The threshold current density is 200 A/cm(2) at 77 K. The relatively low threshold current is attributed to the high Q-factor of the random cavity and the three-dimensional quantum confinement offered by the atomic-scale composition modulation in self-organized AlGaN nanowires. (C) 2015 AIP Publishing LLC.
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