期刊
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
卷 78, 期 8, 页码 -出版社
PHYSICAL SOC JAPAN
DOI: 10.1143/JPSJ.78.083713
关键词
SrTiO3; field effect transistor; metal-insulator transition; superconductivity; 2D
资金
- Japan Society for the Promotion of Science [19104008]
- Grants-in-Aid for Scientific Research [19104008] Funding Source: KAKEN
Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a quasi-two-dimensional (2D) electron gas at the inter-face of insulating SrTiO3 single crystals. Superconductivity was observed in one device doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a quasi-two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据