期刊
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
卷 77, 期 -, 页码 362-364出版社
PHYSICAL SOC JAPAN
DOI: 10.1143/JPSJS.77SA.362
关键词
URu2Si2; electrical resistivity; dHvA
资金
- Ministry of Education, Culture, Sports, Science and Technology [18027015]
- Japan Society for the Promotion of Science [19740222, 15GS0213]
- Grants-in-Aid for Scientific Research [19740222, 18027015] Funding Source: KAKEN
We succeeded in growing a high-quality single crystal of URu2Si2 by the Czochralski pulling method and applying the solid state electro-transport method under ultrahigh vacuum. The sample quality strongly depends on the position in the ingot. For some parts of this ingot, the electrical resistivity, specific heat and de Haas-van Alplhen effect were measured. The electrical resistivity of the surface sample clearly indicates a T-linear temperature dependence below 5 K. The mean free path in this sample was determined by the de Haas-van Alphen effect to be 11000 angstrom.
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