期刊
JOURNAL OF THE NATIONAL SCIENCE FOUNDATION OF SRI LANKA
卷 41, 期 2, 页码 73-80出版社
NATL SCIENCE FOUNDATION SRI LANKA
DOI: 10.4038/jnsfsr.v41i2.5702
关键词
Graded bandgap; next generation solar cells; photon harvesting; solar cells
Various ways to harvest photons in the solar spectrum and heat energy from the surroundings have been considered by utilizing solid state physics principles. A graded bandgap multi-layer solar cell has been designed to absorb UV, visible and infrared radiation, and to combine impact-ionization and impurity photovoltaic (PV) effect to enhance photo-generation of charge carriers and the collection. The above theoretical concepts were experimentally tested using the well researched material system, GaAs/AlxGa(1-x)As. The highest reported V-oc similar to 1175 mV together with the highest possible fill factors (FFs) in the mid 80 %'s, have been achieved for the initial devices. The overall efficiency achieved using only two growths is similar to 20 %. As expected from the initial design, the impurity PV effect is experimentally observed producing Voc values in the range of 650-900 mV under complete darkness for the GaAs/AlxGa(1-x)As based devices. Both the theoretical concepts and experimental results are presented in this paper.
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