Enhanced photocurrent of Ge-doped InGaO thin film transistors with quantum dots

标题
Enhanced photocurrent of Ge-doped InGaO thin film transistors with quantum dots
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 106, Issue 3, Pages 031112
出版商
AIP Publishing
发表日期
2015-01-22
DOI
10.1063/1.4906423

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