期刊
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 56, 期 3, 页码 846-850出版社
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.56.846
关键词
Ionic memory switching; Tantalum oxide; Sputtering
资金
- Basic Science Research Program through the National Research Foundation of Korea [2009-0075196]
- Korea Ministry of Commerce, Industry, and Energy
- National Research Foundation of Korea [2009-0075196] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We investigated the electrical properties of Cu/TaOx/Pt structures, which were prepared by RF-sputtering at room temperature. Spectroscopic ellipsometry (SE) measurements revealed that the refractive indices of the TaOx thin films decreased with increasing oxygen-to-argon gas ratio during the growth. The transport; analyses based on the Poole-Frenkel emission model yielded the dielectric constant of the TaOx layers; the results were consistent with the SE results. The Cu/TaOx/Pt structures exhibited bipolar resistive switching (RS), and less-oxidized samples showed a more reliable RS behavior than more-oxidized ones. The high-to-low resistance ratio was nearly 10(3), and the switching voltage was less than 1 V.
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