期刊
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 54, 期 1, 页码 510-513出版社
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.54.510
关键词
Nanotubes; Gas sensing; Schottky barrier; Field effect
This paper deals with the fabrication of carbon nanotube field effect transistors (CNTFETs) for gas sensing applications. The aim of this study is to achieve a sort of fingerprinting of a specific, gas by using an array of CNTFET-based sensors. The electronic fingerprinting will be obtained by exploiting the change of the metal electrode work function after gas exposure. This one strictly depends on the metal/gas interaction and consequently influences univocally the transfer characteristics of each transistors. To demonstrate this original concept; we have fabricated different CNTFETs using different, metal contacts: An, Pt and Mo. Using these transistors, we have shown that it specific gash in our case DiMethyl-Methyl-Phosphonate (DMMP, a strain simulant), interacts specifically with each metal: exposure to 0.5 ppm of DMMP reduces the transistor ON current by 10 %, 60 % and 25 % after 5 minutes respectively for Au, PC, Mo-based CNTFETs at V-GS = -25 Volt. We think that this new approach can be applied for highly selective sensing of various gases using ultra.-compact, room temperature and very low power devices.
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