Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors

标题
Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors
作者
关键词
-
出版物
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 54, Issue 9(5), Pages 473-477
出版商
Korean Physical Society
发表日期
2009-06-23
DOI
10.3938/jkps.54.473

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