Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device

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A million spiking-neuron integrated circuit with a scalable communication network and interface

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A nitrogen-treated memristive device for tunable electronic synapses

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Synaptic electronics: materials, devices and applications

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Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device

(2013) Sangsu Park et al.   NANOTECHNOLOGY

Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films

(2013) Toshihiro Nakamura et al.   Nanoscale Research Letters

A ferroelectric memristor

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Two-Terminal Carbon Nanotube Programmable Devices for Adaptive Architectures

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Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices

(2009) Z. L. Liao et al.   APPLIED PHYSICS LETTERS

Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications

(2009) Dong-Jun Seong et al.   IEEE ELECTRON DEVICE LETTERS

Stochastic Networked Computation

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