期刊
APPLIED PHYSICS LETTERS
卷 106, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4914181
关键词
-
资金
- Office of Energy Research, Materials Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231]
- National Science Foundation within the Center of Integrated Nanomechanical Systems [EEC-0832819]
- Office of Naval Research (MURI) [N00014-09-1066]
We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date. (C) 2015 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据