Growth Behavior of m-Plane ZnO Epilayer on (100) LiGaO2 by Chemical Vapor Deposition

Nonpolar (10 (1) over bar0)-oriented ZnO has been deposited on (100) LiGaO2 (LGO) substrates with the orientation relationship: (100)(LGO)//(10 (1) over bar0)(ZnO), and [001](LGO)//[0001](ZnO) by chemical vapor deposition. At 650 degrees C or above, the epitaxial deposition of ZnO from the gas phase is in competition with the volatilization of Li from the substrate surface. Zn and O are incorporated into the Li-depleted LGO substrate and ZnGa2O4 spinel nanocrystals are formed on the substrate surface. On the other hand, the (10 (1) over bar0)-oriented ZnO grains, which nucleate epitaxially on the LGO substrate, have to grow laterally over the spinel nanocrystals to form a continuous epilayer. The crystallinity of the epilayers is improved both by prolonging the deposition time and by increasing the growth temperature. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.060111jes] All rights reserved.