Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures

标题
Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures
作者
关键词
-
出版物
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 158, Issue 5, Pages H496
出版商
The Electrochemical Society
发表日期
2011-03-16
DOI
10.1149/1.3556119

向作者/读者发起求助以获取更多资源

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now