Article
Nanoscience & Nanotechnology
Sungju Choi, Jingyu Park, Seong-Hyun Hwang, Changwook Kim, Yong-Sung Kim, Saeroonter Oh, Ju Heyuck Baeck, Jong Uk Bae, Jiyong Noh, Seok-Woo Lee, Kwon-Shik Park, Jeom-Jae Kim, Soo Young Yoon, Hyuck-In Kwon, Dae Hwan Kim
Summary: An excess oxygen-peroxide-based model is proposed to analyze the PBS and NBIS instabilities in commercial SA-TG coplanar IGZO TFTs. The study finds that the stability of both PBS and NBIS deteriorates as the amount of oxygen increases, indicating that the conventional V-O-related defect model is inadequate. The generation and annihilation of subgap states in the excess oxygen peroxide configuration are identified as the dominant physical mechanisms for the instabilities in IGZO TFTs.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Jingdong Liu, Hua Xu, Min Li, Miao Xu, Junbiao Peng
Summary: This study investigates the enhanced negative-bias-illumination-temperature stress stability (NBITS) of indium-zinc-oxide thin-film transistors (IZO TFTs) with terbium (Tb) doping. The Tb-doped IZO TFTs show improved stability compared to the pristine device (AVth decreased from -4.1 to -0.6V after NBITS). Hall measurements, X-ray photoelectron spectroscopy, and microwave photoconductivity decay were used to analyze the effect of Tb doping on the characteristics of metal-oxide-semiconductor films. It is suggested that Tb-induced shallow defects act as recombination centers for capturing photo-generated electrons, complementing the trap-assisted model. The optimized Tb content is determined to be 3.21 at.%, with a mobility of 20.0 cm^2/V.s, ION/IOFF ratio of 10^9, and NBITS of -0.8V.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Pablo Toledo, Isai S. Hernandez Luna, Francisco Hernandez-Cuevas, Norberto Hernandez-Como
Summary: This study investigates the effects on Delta VT under different conditions and finds that full recovery can only be achieved under illumination. Moreover, fixed polarization under illumination shows a stable operating region with negligible variations upon aging.
MICROELECTRONICS RELIABILITY
(2023)
Article
Engineering, Electrical & Electronic
Hengbo Zhang, Lingyan Liang, Xiaolong Wang, Zhendong Wu, Hongtao Cao
Summary: In this study, amorphous praseodymium-doped In-Sn-Zn-O thin-film transistors (ITZO-Pr TFTs) were fabricated under different RF magnetron sputtering powers to improve negative-bias illumination stress (NBIS) stability. The optimized ITZO-Pr TFTs showed improved field effect mobility and reduced light responsivity compared to ITZO TFTs. Furthermore, Pr doping altered the relaxation processes of photoelectrons and lowered the activation energy, enhancing the NBIS stability of ITZO TFTs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Review
Chemistry, Physical
Ahmad Naveed, Tahir Rasheed, Bareera Raza, Jiahang Chen, Jun Yang, Nuli Yanna, Jiulin Wang
Summary: Zinc batteries are praised for their safety, environmental friendliness, and low toxicity, but the poor rechargeability of the zinc anode hinders their applications. By studying the zinc electrochemistry in different electrolyte systems and suggesting methods to improve the reversibility and stability of the zinc anode, the potential of organic electrolytes with safe organic solvents for high-performance zinc ion batteries is highlighted.
ENERGY STORAGE MATERIALS
(2022)
Article
Physics, Multidisciplinary
Jing Bin, Xu Meng, Peng Cong, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng
Summary: In this study, IZTO TFT pixel array with hafnium-aluminum oxide dielectric was fabricated using a solution process, and the electrical characteristics were improved by N2O plasma treatment, leading to decreased subthreshold swing and increased saturation mobility. X-ray photoelectron spectrum analysis confirmed that interface states may have been passivated by reactive O radicals. Additionally, the stability of NBIS was significantly enhanced by the plasma treatment.
ACTA PHYSICA SINICA
(2022)
Article
Engineering, Electrical & Electronic
Yu-Shien Shiah, Kihyung Sim, Shigenori Ueda, Junghwan Kim, Hideo Hosono
Summary: CO-related impurity is the main source of instability in high-mobility amorphous oxide semiconductors; UV ozone treatment can improve performance and bias stability of ITZO TFT; NBS instability caused by CO-related impurity does not occur in Sn-free IZO-TFTs and IGZO TFTs.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Yujiro Takeda, Takanori Takahashi, Ryoko Miyanaga, Juan Paolo S. Bermundo, Yukiharu Uraoka
Summary: We studied the degradation of top-gate In-Ga-Zn-O (IGZO) thin film transistors (TFTs) with hump formation, positive threshold voltage (Vth) shift, and reduction in on-current (Ion) after negative gate bias and light irradiation stress. This degradation can be attributed to hole trapping at the IGZO/top gate insulator (TGI) interface causing the hump effect, trapped photo-induced electrons at the IGZO/bottom gate insulator (BGI) interface leading to the positive Vth shift, and trapped photo-induced electrons at the n-region of IGZO/BGI interface causing Ion reduction. The presence of trapped electrons induces electric field, resulting in depletion of the channel region and drop in effective gate and drain voltage. The degradation was effectively suppressed by the dual-gate structure.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Yue Zhou, Dao Wang, Yushan Li, Lixin Jing, Shuangjie Li, Xiaodan Chen, Beijing Zhang, Wentao Shuai, Ruiqiang Tao, Xubing Lu, Junming Liu
Summary: The pulsed laser deposition (PLD) technique shows potential in developing a-IGZO TFTs for flexible applications due to its low processing temperature and easy operation in an oxygen atmosphere. This study systematically investigates the effects of oxygen pressure and post-annealing processes on the performance of a-IGZO TFTs prepared by PLD. The results demonstrate that high-quality devices can be obtained at specific oxygen pressure, and the presence of oxygen vacancies significantly affects the device performance.
Article
Nanoscience & Nanotechnology
Sang Youn Chae, Yoolim Kim, Eun Duck Park, Sang Hyuk Im, Oh-Shim Joo
Summary: The application of the (Ta,Mo)(x)(O,S)(y) atomic gradient passivation layer leads to promising photocurrent and onset potential for CuInS2-based photocathodes, without the need for Pt cocatalysts. The improved electron transient time and boosted electrocatalytic activity contribute to the excellent photoelectrochemical performance of the photoelectrode.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Yu-Xuan Wang, Ting-Chang Chang, Mao-Chou Tai, Chia-Chuan Wu, Yu-Zhe Zheng, Yu-Fa Tu, Jian-Jie Chen, Kuan-Ju Zhou, Yu-Shan Shih, Yu-An Chen, Jen-Wei Huang, Simon Sze
Summary: This study investigated the negative bias temperature instability (NBTI) under mechanical strain conditions of low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). By employing a stress-release structure, the participation of strained Si-H bonds in the electrochemical reaction was reduced, leading to enhanced device reliability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Kie Yatsu, Hyun-Ah Lee, Ick-Joon Park, Hyuck-In Kwon
Summary: This paper investigates the effects of X-ray irradiation on the electrical performance of IGTO thin-film transistors (TFTs) protected with an aluminum oxide (Al2O3) passivation layer. The radiation stability of the passivated IGTO TFTs is evaluated depending on the thicknesses and deposition techniques of the passivation layer. The mechanisms of radiation damage to the IGTO TFTs are proposed, and different barrier roles of RF sputtering-and atomic layer deposition (ALD)-based Al2O3 passivation layers are observed.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Chang Liu, Houyun Qin, Yiming Liu, Song Wei, Hongbo Wang, Yi Zhao
Summary: The InGaZnO thin film transistor with organosilicon passivation layer (PVL) showed improved performance with high mobility, low subthreshold swing, good threshold voltage, and I-on/I-off ratio. The PVL also reduced threshold voltage shift under positive and negative bias stress conditions.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Engineering, Electrical & Electronic
Caihao Deng, Linfeng Lan, Penghui He, Yaping Li, Xiao Li, Siting Chen, Junbiao Peng
Summary: This article investigates the effect of incorporating wide bandgap Ga2O3 into In2O3 on the NBIS stability of oxide TFTs, finding a tradeoff between mobility and stability. Increasing Ga2O3 concentration leads to improved NBIS stability but decreased mobility, attributed to bandgap widening and reduced sensitivity to incident white light.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Bin Jing, Cong Peng, Meng Xu, Huixue Huang, Xifeng Li, Jianhua Zhang
Summary: This study investigates the effect of light illumination intensity on the stability of solution processed In-Zn-Sn-O (IZTO) thin-film transistor (TFT) arrays. The results show that light illumination suppresses Vth shift under positive bias illumination stress, but leads to two-stage degradation and the occurrence of a hump phenomenon under negative bias illumination stress. The severity of the hump phenomenon is directly related to the light illumination intensity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Materials Science, Ceramics
Hyun-Jun Jeong, Dong-Hyun Kim, Jozeph Park, Jin-Seong Park
CERAMICS INTERNATIONAL
(2018)
Article
Materials Science, Ceramics
Dong-Hyun Kim, Hyun-Jun Jeong, Jozeph Park, Jin-Seong Park
CERAMICS INTERNATIONAL
(2018)
Article
Materials Science, Multidisciplinary
Ki-Lim Han, Hyeon-Su Cho, Kyung-Chul Ok, Saeroonter Oh, Jin-Seong Park
ELECTRONIC MATERIALS LETTERS
(2018)
Article
Engineering, Electrical & Electronic
Hyun-Jun Jeong, Ki-Lim Han, Kyung-Sub Jeong, Saeroonter Oh, Jin-Seong Park
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Engineering, Electrical & Electronic
Jong-Seok Kim, Jung-Woo Byun, Jun-Hwan Jang, Yong-Duck Kim, Ki-Lim Han, Jin-Seong Park, Byong-Deok Choi
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2018)
Article
Chemistry, Physical
Jun Hyung Lim, Hyun-Jun Jeong, Keun-Tae Oh, Dong-Hyun Kim, Joon Seok Park, Jin-Seong Park
JOURNAL OF ALLOYS AND COMPOUNDS
(2018)
Article
Materials Science, Multidisciplinary
Jung-Dae Kwon, Johwa Yang, Jin-Seong Park, Dong-Won Kang
Article
Materials Science, Multidisciplinary
Hyun-Jun Jeong, Hyun-Mo Lee, Kyung-Chul Ok, Jozeph Park, Jin-Seong Park
JOURNAL OF MATERIALS CHEMISTRY C
(2018)
Article
Chemistry, Physical
Ji-Won Jung, Dong-Won Choi, Chan Kyu Lee, Ki Ro Yoon, Sunmoon Yu, Jun Young Cheong, Chanhoon Kim, Su-Ho Cho, Jin-Seong Park, Yong Joon Park, Il-Doo Kim
Article
Chemistry, Multidisciplinary
Yonghui Lee, Seunghwan Lee, Gabseok Seo, Sanghyun Paek, Kyung Taek Cho, Aron J. Huckaba, Marco Calizzi, Dong-won Choi, Jin-Seong Park, Dongwook Lee, Hyo Joong Lee, Abdullah M. Asiri, Mohammad Khaja Nazeeruddin
Article
Nanoscience & Nanotechnology
Jung-Hoon Lee, Mi Yoo, DongHee Kang, Hyun-Mo Lee, Wan-ho Choi, Jung Woo Park, Yeonjin Yi, Hyun You Kim, Jin-Seong Park
ACS APPLIED MATERIALS & INTERFACES
(2018)
Article
Nanoscience & Nanotechnology
Hyun-Mo Lee, Hyun-Jun Jeong, Kyung-Chul Ok, You Seung Rim, Jin-Seong Park
ACS APPLIED MATERIALS & INTERFACES
(2018)
Article
Polymer Science
Eunmi Cho, Mac Kim, Jin-Seong Park, Sang-Jin Lee
Article
Physics, Condensed Matter
Jiazhen Sheng, Ki-Lim Han, TaeHyun Hong, Wan-Ho Choi, Jin-Seong Park
JOURNAL OF SEMICONDUCTORS
(2018)
Article
Materials Science, Multidisciplinary
Jin-seong Park, Ho Jong Lee, Sung Jin Kim
KOREAN JOURNAL OF MATERIALS RESEARCH
(2018)