期刊
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
卷 157, 期 4, 页码 H463-H469出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3302003
关键词
dielectric hysteresis; electric breakdown; gold; high-k dielectric thin films; MIS capacitors; MIS structures; nanoparticles; random-access storage; semiconductor storage
资金
- Israeli Ministry of Trade and Industry
- KAMEHA Program
We present a metal-insulator-semiconductor nonvolatile memory capacitor based on two gold nanoparticle charge storage layers, two HfO(2) layers, and a multilayer HfNO/HfTiO stack. The device exhibits an equivalent oxide thickness of 7.3 nm, a hysteresis of 15 V at a gate voltage of +11 to -8 V, and a storage charge density of 2.75x10(13) cm(-2). A leakage of 3.6x10(-5) A/cm(2) at -10 V, a breakdown voltage of 13.3 V, and good retention properties with a hysteresis window of 10 V following more than 10 h of consecutive write/erase operations with a +/- 7 V swing were demonstrated. The capacitor characteristics are frequency-independent in the 10 kHz-1 MHz range.
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