期刊
APPLIED PHYSICS LETTERS
卷 106, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4907320
关键词
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [NRF-2014R1A1A1A05002158]
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Science, ICT & Future Planning, Korea [2013M3A6A5073175]
- Mid-career Researcher Program through NRF grant - MEST [2014R1A2A1A09005656]
We fabricated organic memory devices with metal-pentacene-insulator-silicon structure which contain double dielectric layers comprising 3D pattern of Au nanoparticles (Au NPs) and block copolymer (PS-b-P2VP). The role of Au NPs is to charge/discharge carriers upon applied voltage, while block copolymer helps to form highly ordered Au NP patterns in the dielectric layer. Double-layered nanocomposite dielectrics enhanced the charge trap density (i.e., trapped charge per unit area) by Au NPs, resulting in increase of the memory window (Delta V-th). (C) 2015 AIP Publishing LLC.
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