Improved Hydrogen Gas Generation Rate of n-GaN Photoelectrode with SiO[sub 2] Protection Layer on the Ohmic Contacts from the Electrolyte

标题
Improved Hydrogen Gas Generation Rate of n-GaN Photoelectrode with SiO[sub 2] Protection Layer on the Ohmic Contacts from the Electrolyte
作者
关键词
-
出版物
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 157, Issue 2, Pages B266
出版商
The Electrochemical Society
发表日期
2010-01-01
DOI
10.1149/1.3270485

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