Switching Power Reduction in Phase Change Memory Cell Using CVD Ge[sub 2]Sb[sub 2]Te[sub 5] and Ultrathin TiO[sub 2] Films

标题
Switching Power Reduction in Phase Change Memory Cell Using CVD Ge[sub 2]Sb[sub 2]Te[sub 5] and Ultrathin TiO[sub 2] Films
作者
关键词
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出版物
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 156, Issue 1, Pages H59
出版商
The Electrochemical Society
发表日期
2008-11-25
DOI
10.1149/1.3008013

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