Low-pressure metallorganic chemical vapor deposition of Fe(2)O(3) thin films on Si(100) using n-butylferrocene and oxygen

alpha-Fe(2)O(3) thin films have been deposited on Si(100) substrates using n-butylferrocene and oxygen in a low-pressure metallorganic chemical vapor deposition reactor. The iron precursor is liquid at room temperature having a high enough vapor pressure; its thermogravimetric analysis shows that it undergoes clean evaporation without decomposition. The growth rates were studied in the temperature range of 400-600 degrees C. The resulting thin films were characterized for structure and morphology using X-ray diffraction and scanning electron microscopy. Their composition was analyzed using energy-dispersive X-ray spectroscopy, and chemical bonding states were probed using X-ray photoelectron spectroscopy. Films deposited at 450 degrees C were mostly noncrystalline and had carbon contamination. Films deposited at higher temperatures were crystalline alpha-Fe(2)O(3). (C) 2008 The Electrochemical Society.