Improving Threshold Voltage and Device Performance of Gate-First HfSiON/Metal Gate n-MOSFETs by an ALD La[sub 2]O[sub 3] Capping Layer

标题
Improving Threshold Voltage and Device Performance of Gate-First HfSiON/Metal Gate n-MOSFETs by an ALD La[sub 2]O[sub 3] Capping Layer
作者
关键词
-
出版物
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 155, Issue 6, Pages H373
出版商
The Electrochemical Society
发表日期
2008-05-04
DOI
10.1149/1.2901915

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