期刊
APPLIED PHYSICS LETTERS
卷 106, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4907568
关键词
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资金
- National Key Basic Research Program of China [2013CB328703]
- National Natural Science Foundation of China [51372220, 61177062]
- Fundamental Research Funds for the Central Universities
- Royal Academy of Engineering (Graphlex)
We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (< 1 mu A) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 mu A current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecture offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs. (C) 2015 AIP Publishing LLC.
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