Parallel Hall effect from three-dimensional single-component metamaterials

We propose a class of three-dimensional metamaterial architectures composed of a single doped semiconductor (e.g., n-Si) in air or vacuum which lead to an unusual effective behavior of the classical Hall effect. Using an anisotropic structure, we numerically demonstrate a Hall voltage that is parallel-rather than orthogonal-to the external static magnetic-field vector (parallel Hall effect). The sign of this parallel Hall voltage can be determined by a structure parameter. Together with the previously demonstrated positive or negative orthogonal Hall voltage, we demonstrate four different sign combinations. (C) 2015 AIP Publishing LLC.