Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
出版年份 2015 全文链接
标题
Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 107, Issue 5, Pages 053101
出版商
AIP Publishing
发表日期
2015-08-04
DOI
10.1063/1.4927529
参考文献
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