4.8 Article

Size- and Orientation-Selective Si Nanowire Growth: Thermokinetic Effects of Nanoscale Plasma Chemistry

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JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 135, 期 5, 页码 1912-1918

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AMER CHEMICAL SOC
DOI: 10.1021/ja3110279

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  1. Australian Research Council
  2. CSIRO's OCE Science Leadership Program
  3. University of Sydney International Scholarship
  4. CSIRO OCE top-up scholarship

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A multiscale, multiphase thermokinetic model is used to show the effective control of the growth orientation of thin Si NWs for nanoelectronic devices enabled by nanoscale plasma chemistry. It is shown that very thin Si NWs with [110] growth direction can nucleate at much lower process temperatures and pressures compared to thermal chemical vapor deposition where [111]-directed Si NWs are predominantly grown. These findings explain a host of experimental results and offer the possibility of energy- and matter-efficient, size- and orientation-controlled growth of [110] Si NWs for next-generation nanodevices.

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