Article
Chemistry, Physical
Chongchong Tang, Michael Duerrschnabel, Ute Jaentsch, Michael Klimenkov, Martin Steinbrueck, Sven Ulrich, Marcus Hans, Jochen M. Schneider, Michael Stueber
Summary: Periodically stacked nanoscale V/C/Al multilayered thin film precursors were deposited and annealed in argon, leading to the formation of V2AlC MAX phase with undulation growth of nanolayers and preferential incorporation of Ar atoms into amorphous carbon nanolayers. Single-phase and basal-plane-oriented V2AlC films were formed at annealing temperatures above 560 degrees C. The annealed films exhibited high-density nanoscale Ar clusters/bubbles at grain boundaries, showing pronounced layered distribution characteristics, especially near the substrate/film interface. The heterogeneous incorporation of argon atoms or clusters in heterostructured films likely represents a common phenomenon during thin film nucleation and growth, with its impact on macroscopic properties still to be explored.
APPLIED SURFACE SCIENCE
(2023)
Article
Materials Science, Coatings & Films
Marcus Hans, Michael Tkadletz, Daniel Primetzhofer, Helene Waldl, Maximilian Schiester, Matthias Bartosik, Christoph Czettl, Nina Schalk, Christian Mitterer, Jochen M. Schneider
Summary: The study investigates the quantification of vacancy concentrations in (Ti,Al)N thin films using laser-assisted atom probe tomography (APT) data. A comparison with ion beam analysis data reveals significant differences, indicating that it is not meaningful to quantify the vacancy concentrations solely based on APT data for nanolamellar (Ti,Al)N thin films.
SURFACE & COATINGS TECHNOLOGY
(2023)
Article
Chemistry, Physical
T. Roch, M. Gregor, S. Volkov, M. Caplovicova, L. Satrapinskyy, A. Plecenik
Summary: This study examined the impact of different substrates on the structure and orientation of niobium nitride thin films, revealing that films on C-Al2O3 substrate exhibited the best superconducting properties.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Deepak Goyal, C. P. Goyal, H. Ikeda, C. Gopalakrishnan, P. Malar
Summary: In this paper, CuSbSe2 chalcostibite thin films were successfully grown via pulsed laser deposition using bulk ball milled compound. The thin films exhibited near stoichiometry and favorable photovoltaic characteristics, with a band gap of around 1.2 eV observed. Material characteristics were evaluated using various techniques, including X-ray diffraction and spectroscopy studies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Engineering, Electrical & Electronic
Neda Bathaei, Binbin Weng, Hjalti Sigmarsson
Summary: This study experimentally investigated a technique for crystallization of GeTe thin films using the PED growth method, and evaluated the crystal quality and electrical conductivity performance through various characterization methods.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Physical
Shi-Yu Liu, Zong-Yuan Lin, Ye-Ren Chang, Yu-Tso Liao, Po-Hsun Wu, Ssu-Yen Huang, Wen-Chin Lin, Fang-Yuh Lo
Summary: Several studies have shown that rare earth elements can be used to regulate the magnetic anisotropy of garnet films. In this study, rare earth iron garnet (REIG) thin films were fabricated using pulsed laser deposition. The films exhibited different strain and crystal orientation depending on the ionic radius of the rare earth metal ions. The films also showed strong perpendicular magnetic anisotropy and different sensitivities to light at different wavelengths, which could be useful for high-density nano-scale magnetic information storage.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Materials Science, Ceramics
N. E. Vazquez-Barragan, K. Rodriguez-Rosales, M. Colunga-Saucedo, C. E. Perez-Garcia, J. Santos-Cruz, S. A. Perez-Garcia, G. Contreras-Puente, F. de Moure-Flores
Summary: Cu-Sb-Se targets were synthesized through solid-state reaction and Cu-Sb-Se films were deposited at different temperatures using the synthesized targets. The study found that films deposited at a substrate temperature of 350 degrees C exhibited the best structural and optical properties, making them suitable as absorber layers in photovoltaic devices.
CERAMICS INTERNATIONAL
(2022)
Article
Materials Science, Multidisciplinary
C-E Bejjit, V. Roge, C. Cachoncinlle, C. Hebert, J. Perriere, E. Briand, E. Millon
Summary: In this study, different FeOx-based thin films were successfully grown using pulsed-laser deposition. The films include metallic iron, α-Fe2O3, Fe3O4, and the thermodynamically metastable phase FeO. The results demonstrate that the O/Fe ratio in the films can be controlled by adjusting the substrate temperature and oxygen pressure.
Article
Physics, Condensed Matter
Ji-Hoon Kang, Jihyun Kim, Tae Beom Park, Woo Seok Choi, Sungmin Park, Tuson Park
Summary: We report the growth of CeIrIn5 thin films with different crystal orientations on a MgF2 (001) substrate using the pulsed laser deposition technique. The characteristic features of heavy-fermion superconductors, including Kondo coherence and superconductivity, were observed in the thin films. The successful synthesis of CeIrIn5 thin films is expected to provide a new avenue for exploring novel quantum phases.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2022)
Article
Crystallography
Venkata Sreenivas Puli, Dhiren Kumar Pradhan, Gollapudi Sreenivasulu, Simhachalam Narendra Babu, Nandiraju Venkata Prasad, Kalpana Madgula, Douglas B. Chrisey, Ram S. Katiyar
Summary: The development of lead-free BaTiO3/NiFe2O4/BaTiO3 (BTO/NFO/BTO) trilayer structure thin films is significant for eco-friendly and implantable microelectromechanical systems (MEMS)-based devices. The deposited trilayer films show interesting properties such as high room temperature dielectric constant, magnetoelectric behavior, and a reasonably high saturation magnetization at room temperature. The tri-layered films exhibit interesting magnetoelectric coupling coefficient at room temperature.
Article
Materials Science, Multidisciplinary
Filipe C. Correia, Joana M. Ribeiro, Armando Ferreira, J. Sebastian Reparaz, Alejandro R. Goni, Torben Boll, Adelio Mendes, Carlos J. Tavares
Summary: This study focuses on the Bi doping effect on ZnO and the microstructure changes induced by the co-doping of Bi and Al in ZnO thin films. The results show that the introduction of Bi and Al can significantly reduce the thermal conductivity of ZnO films, with Bi mainly contributing to grain boundary scattering. However, the coexistence of Bi and Al limits further reduction in thermal conductivity due to morphological changes in the film's microstructure. The findings are important for improving thermoelectric efficiency.
Article
Chemistry, Physical
L. Khomenkova, H. Merabet, M. -P. Chauvat, C. Frilay, X. Portier, C. Labbe, P. Marie, J. Cardin, S. Boudin, J. -M. Rueff, F. Gourbilleau
Summary: The effect of Er precursor nature and annealing treatment on the properties of Er2O3 films grown on Si substrates was studied. Annealing resulted in film crystallization and the formation of Er silicate phase. The light emitting properties were determined by native defects and intra-4f shell transition. The intense Er3+ emission in the films grown with O2-plasma-assisted approach was attributed to a lower contribution of oxygen vacancies and pronounced crystallization of Er silicate phase.
SURFACES AND INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Georgia Andra Boni, Cristina Florentina Chirila, Viorica Stancu, Luminita Amarande, Iuliana Pasuk, Lucian Trupina, Cosmin Marian Istrate, Cristian Radu, Andrei Tomulescu, Stefan Neatu, Ioana Pintilie, Lucian Pintilie
Summary: This study investigates the structural and electrical properties of epitaxial Pb(Zr0.2Ti0.8)O-3 films grown from targets with different purities, revealing that impurities in the target materials can significantly affect the film properties.
Article
Engineering, Electrical & Electronic
Samba Ndiaye, Sebastien Duguay, Francois Vurpillot, Chiara Carraro, Gianluigi Maggioni, Enrico Di Russo, Davide De Salvador, Enrico Napolitani, Lorenzo Rigutti
Summary: Hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting were analyzed using Atom Probe Tomography (APT). The 1D concentration profiles obtained by APT under low field conditions were consistent with those obtained by secondary ion mass spectrometry. However, the 3D distribution of Sb indicated the occurrence of Sb segregation along line defects, with random distribution outside of these defects. APT measurements revealed a dependence of the measured composition on the electric field. Analysis of the mass spectra and multiple detection events showed that low-field conditions should be adopted for accurate composition measurement.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Nanoscience & Nanotechnology
Christopher Mead, Chunyi Huang, Nebile Isik Goktas, Elisabetta Maria Fiordaliso, Ray R. LaPierre, Lincoln J. Lauhon
Summary: Controlling the distribution of dopants in nanowires is crucial for regulating their electronic properties. In this study, the spatial distribution of Be dopants in a GaAs nanowire with a twinning superlattice (TSL) was investigated. The results showed homogeneous dopant distributions in both the radial and axial directions, indicating a decoupling of the dopant distribution from the nanowire microstructure. Additionally, the analysis revealed that a small percentage of Be atoms occurred in substitutional-interstitial pairs, confirming theoretical predictions based on low defect formation energy.
Article
Materials Science, Multidisciplinary
Soren Roesgaard, Etienne Talbot, Constantinos Hatzoglou, John Lundsgaard Hansen, Brian Julsgaard
MATERIALS RESEARCH EXPRESS
(2019)
Article
Materials Science, Multidisciplinary
Remi Demoulin, Dominique Muller, Daniel Mathiot, Philippe Pareige, Etienne Talbot
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2020)
Article
Chemistry, Physical
E. Martin, F. Roulland, S. Grenier, F. Appert, J. Juraszek, M. Trassin, C. Bouillet, E. Chikoidze, C. Arnold, B. Berini, Y. Dumont, S. Colis, S. Barre, G. Versini, D. Preziosi, C. Leuvrey, N. Blanc, N. Boudet, G. Pourroy, N. Viart, C. Lefevre
JOURNAL OF ALLOYS AND COMPOUNDS
(2020)
Article
Chemistry, Multidisciplinary
Peter Dunne, Ciaran Fowley, Gregor Hlawacek, Jinu Kurian, Gwenael Atcheson, Silviu Colis, Niclas Teichert, Bohdan Kundys, Munuswamy Venkatesan, Jurgen Lindner, Alina Maria Deac, Thomas M. Hermans, J. M. D. Coey, Bernard Doudin
Article
Physics, Applied
Charlie Greboval, Ulrich Nguetchuissi Noumbe, Audrey Chu, Yoann Prado, Adrien Khalili, Corentin Dabard, Tung Huu Dang, Silviu Colis, Julien Chaste, Abdelkarim Ouerghi, Jean-Francois Dayen, Emmanuel Lhuillier
APPLIED PHYSICS LETTERS
(2020)
Article
Optics
R. Demoulin, L. Khomenkova, C. Labbe, F. Gourbilleau, C. Castro, P. Pareige, E. Talbot
Summary: The luminescence and structural properties of Pr3+ doped HfSiOx thin layers deposited by magnetron sputtering were investigated in relation to annealing temperatures. The emission from Pr3+ ions in the visible range was observed at temperatures above 950 degrees C, with a new orthorhombic crystalline structure of HfO2 nano-grains appearing at 1050 degrees C, leading to new emission peaks in the infrared range. The evolution of cathodoluminescence signal with annealing treatment was discussed in connection with structural changes.
JOURNAL OF LUMINESCENCE
(2021)
Article
Chemistry, Physical
Dongke Li, Jiaming Chen, Zhaoguo Xue, Teng Sun, Junnan Han, Wanghua Chen, Etienne Talbot, Remi Demoulin, Wei Li, Jun Xu, Kunji Chen
Summary: Understanding the distribution and behavior of dopants in silicon nanocrystals is crucial for achieving controllable doping at the nanoscale and developing next-generation optoelectronic devices. This study investigates the atomic-scale distributions of phosphorus and boron dopants in silicon nanocrystal multilayers. The results show that phosphorus dopants mainly concentrate on the surfaces of silicon nanocrystals to passivate dangling bonds and provide free electrons, while boron dopants exhibit a different distribution pattern, forming a dopant-shell covering on the surfaces of silicon nanocrystals and leading to damage in the crystalline lattice.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Physical
S. Guehairia, R. Demoulin, H. Merabet, P. Pareige, J. Cardin, C. Labbe, M. Carrada, F. Gourbilleau, E. Talbot
Summary: The optical and structural properties of Er-doped silicon oxide thin films were investigated during annealing treatment. Atom Probe Tomography and Transmission electron microscopy were used to analyze the position of rare-earth ions and phase separation. The emission properties of Er3+ ions were studied using cathodoluminescence spectroscopy.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Nanoscience & Nanotechnology
Alix Valdenaire, Alaa Eldin Giba, Mathieu Stoffel, Xavier Devaux, Loic Foussat, Jean -Marie Poumirol, Caroline Bonafos, Sonia Guehairia, Remi Demoulin, Etienne Talbot, Michel Vergnat, Herve Rinnert
Summary: In this work, the plasmonic properties of highly doped Si nanocrystals embedded in a silica matrix were investigated. P atoms were mainly located in the core of Si nanocrystals with concentrations reaching up to 10 atom %. Alloying and formation of SiP nanoparticles were observed for P contents exceeding 4 atom % in the multilayer. The infrared absorption measurements showed a localized surface plasmon resonance located in the 3-6 μm range. The simulation results revealed a dopant activation rate of about 8% with a mobility of 27 cm2 V-1 s-1 and a free charge carrier density of 2.3 x 1020 cm-3.
ACS APPLIED NANO MATERIALS
(2023)
Article
Nanoscience & Nanotechnology
Meiling Zhang, Jean-Marie Poumirol, Nicolas Chery, Clement Majorel, Remi Demoulin, Etienne Talbot, Herve Rinnert, Christian Girard, Fuccio Cristiano, Peter R. Wiecha, Teresa Hungria, Vincent Paillard, Arnaud Arbouet, Beatrice Pecassou, Fabrice Gourbilleau, Caroline Bonafos
Summary: This study demonstrates the presence of free carriers in phosphorus doped silicon nanocrystals using LSPR as an optical probe. It also reveals a new scattering process at high dopant concentration. The infrared spectroscopy study coupled with numerical simulations allows for precise determination of the number of electrically active phosphorus atoms.
Article
Chemistry, Multidisciplinary
Fatme Trad, Alaa E. Giba, Xavier Devaux, Mathieu Stoffel, Denis Zhigunov, Alexandre Bouche, Sebastien Geiskopf, Remi Demoulin, Philippe Pareige, Etienne Talbot, Michel Vergnat, Herve Rinnert
Summary: This study investigates the influence of phosphorous atoms on the phase separation and optical properties of silicon nanocrystals. It is found that phosphorus incorporation modifies the growth mechanism of Si-NCs, promoting phase separation and leading to nanocrystal formation at lower annealing temperatures. The presence of phosphorus also affects the size and emission wavelength of Si-NCs, and low phosphorus content can significantly improve photoluminescence intensity.
Article
Materials Science, Multidisciplinary
M. Fevre, J-M Sanchez, J. R. Stewart, J-S Merot, F. Fossard, Y. Le Bouar, K. Tanaka, H. Numakura, G. Schmerber, V Pierron-Bohnes
Article
Chemistry, Physical
Mircea V. Rastei, Florian Gelle, Guy Schmerber, Alessandro Quattropani, Thomas Fix, Aziz Dinia, Abdelilah Slaoui, Silviu Colis
ACS APPLIED ENERGY MATERIALS
(2019)
Article
Chemistry, Physical
Karima Bouras, Guy Schmerber, Damien Aureau, Herve Rinnert, Jean-Luc Rehspringer, Dris Ihiawakrim, Aziz Dinia, Abdelilah Slaoui, Silviu Colis
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2019)
Article
Chemistry, Physical
Karima Bouras, Guy Schmerber, Gerald Ferblantier, Damien Aureau, Hyeonwook Park, Woo Kyoung Kim, Herve Rinnert, Aziz Dinia, Abdelilah Slaoui, Silviu Colis
ACS APPLIED ENERGY MATERIALS
(2019)
