High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences

标题
High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences
作者
关键词
-
出版物
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 132, Issue 46, Pages 16349-16351
出版商
American Chemical Society (ACS)
发表日期
2010-10-28
DOI
10.1021/ja107046s

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