Electronic structure of β-Ga2O3 single crystals investigated by hard X-ray photoelectron spectroscopy

By combination of hard X-ray photoelectron spectroscopy (HAXPES) and first-principles band structure calculations, the electronic states of beta-Ga2O3 were investigated to deepen the understanding of bulk information for this compound. The valence band spectra of HAXPES presented the main contribution from Ga 4sp, which are well represented by photoionization cross section weighted partial density of states. The experimental data complemented with the theoretical study yield a realistic picture of the electronic structure for beta-Ga2O3. (C) 2015 AIP Publishing LLC.