期刊
APPLIED PHYSICS LETTERS
卷 106, 期 17, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4918991
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资金
- Natural Science Foundation of China [6140403]
- Heilongjiang Province Foundation for Returned Chinese Scholars [LC201401]
- Youth Science Foundation of Heilongjiang Province [QC2014C056]
- Educational Commission of Heilongjiang Province of China [12531Z006]
A metal-semiconductor-metal (MSM) structure ultraviolet photodetector has been fabricated from amorphous InGaZnO (a-IGZO) film at room temperature. The photodetector can work without consuming external power and show a responsivity of 4 mA/W. The unbiased photoresponse characteristic is attributed to the hole-trapping process occurred in the electrode/a-IGZO interface, and a physical model based on band energy theory is proposed to explain the origin of the photoresponse at zero bias in our device. Our findings may provide a way to realize unbiased photoresponse in the simple MSM structure. (C) 2015 AIP Publishing LLC.
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