4.3 Article

Phase Diagram and Upper Critical Field of Homogeneously Disordered Epitaxial 3-Dimensional NbN Films

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SPRINGER
DOI: 10.1007/s10948-010-1038-8

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NbN films; Upper critical field (H-c2); Metal-insulator transition; Superconductor-insulator transition

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We report the evolution of superconducting properties with disorder, in 3-dimensional homogeneously disordered epitaxial NbN thin films. The effective disorder in NbN is controlled from moderately clean limit down to Anderson metal-insulator transition by changing the deposition conditions. We propose a phase diagram for NbN in temperature-disorder plane. With increasing disorder, we observe that as k (F) l -> 1 the superconducting transition temperature (T (c) ) and normal state conductivity in the limit T -> 0 (sigma (0)) go to zero. The phase diagram shows that in homogeneously disordered 3-D NbN films, the metal-insulator transition and the superconductor-insulator transition occur at a single quantum critical point, k (F) l similar to 1.

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