High-mobility BaSnO3thin-film transistor with HfO2gate insulator

标题
High-mobility BaSnO3thin-film transistor with HfO2gate insulator
作者
关键词
-
出版物
Applied Physics Express
Volume 9, Issue 1, Pages 011201
出版商
Japan Society of Applied Physics
发表日期
2015-12-10
DOI
10.7567/apex.9.011201

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