期刊
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
卷 66, 期 2, 页码 293-300出版社
SPRINGER
DOI: 10.1007/s10971-013-3007-8
关键词
Thin film; Sol-gel; Phase transition; Atomic force microscope; X-ray photoelectron spectroscopy; Optical properties
资金
- UGC, Government of India
Ag doped ZrO2 thin films were deposited on quartz substrates by sol-gel dip coating technique. The effect of Ag doping on tetragonal to monoclinic phase transformation of ZrO2 at a lower temperature (500 A degrees C) was investigated by X-ray diffraction. It is found that the Ag doping promotes the phase transformation. The phase transformation can be attributed to the increase in the tetragonal grain size and concentration of oxygen vacancies in the presence of the Ag dopant. Accumulation of the Ag atoms at the film surface and surface morphology changes in the films were observed by AFM as a function of varying Ag concentration. X-ray photoelectron spectroscopy gave Ag 3d and O 1s spectra on Ag doped thin film. The chemical states of Ag have been identified as the monovalent state of Ag+ ions in ZrO2. The Ag doped ZrO2 thin films demonstrated the tailoring of band gap values. It is also found that the intensity of room temperature photoluminescence spectra is suppressed with Ag doping.
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