☆ 4.6 Article

Structural and electrical properties of Li doped ZnO under Ar/H2 atmosphere

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY (2013)

期刊

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY

卷 65, 期 2, 页码 238-242

出版社

SPRINGER

DOI: 10.1007/s10971-012-2930-4

关键词

Thin films; Wurtzite structure; X-ray diffraction; Electrical properties

类别

Materials Science, Ceramics

资金

University Grants Commission (UGC) India

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Protocol

Reagent

摘要

Thin films of ZnO were grown by the sol-gel method using spin-coating technique on (0001) sapphire substrates. The effect of doping under Ar/H-2 atmosphere on the structural and electrical properties of ZnO was investigated by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), I-V characterization, Hall effect and micro-photoluminescence. The films that were annealed at 600 A degrees C in Ar/H-2 (95/5) % atmosphere showed (002) a predominant orientation. The crystalline nature of 2 mol. % of Li doped films were better when compared to 1 mol. % of Li doped films. The incorporation of Li in ZnO lattice was confirmed by X-ray photoelectron spectroscopy, and micro-photoluminescence. Hall effect measurements and I-V characterization of the Li doped ZnO thin films exhibited a better p-type behavior.

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