Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer

标题
Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer
作者
关键词
-
出版物
Applied Physics Express
Volume 8, Issue 2, Pages 026502
出版商
Japan Society of Applied Physics
发表日期
2015-01-20
DOI
10.7567/apex.8.026502

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