Band alignment between 4H-SiC and atomic-layer-deposited ZrO2determined by X-ray photoelectron spectroscopy

标题
Band alignment between 4H-SiC and atomic-layer-deposited ZrO2determined by X-ray photoelectron spectroscopy
作者
关键词
-
出版物
Applied Physics Express
Volume 8, Issue 9, Pages 091302
出版商
Japan Society of Applied Physics
发表日期
2015-09-03
DOI
10.7567/apex.8.091302

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