Plasma-enhanced atomic-layer-deposited MoO x emitters for silicon heterojunction solar cells

A method for the deposition of molybdenum oxide () with high growth rates at temperatures below 200 based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed.