Article
Chemistry, Physical
R. Szymon, E. Zielony, A. Lysak, M. A. Pietrzyk
Summary: In this study, a pair of heterojunctions with different types of interlayer, n-ZnO/ZnCdO and n-ZnCdO/ZnO, were grown and investigated. The electrical properties and parameters of these heterojunctions were characterized using current-voltage (I-V) characteristics and capacitance-voltage characteristics. Different carrier transport mechanisms were observed, including tunneling, multi-tunneling capture-emission, and space-charge limited currents. Defects in the junctions were characterized using deep level transient spectroscopy, and the influence of cadmium ions in the ZnCdO interlayer on trap levels was observed. The interlayer type was found to affect junction parameters and current transport mechanisms. (c) 2023 The Author(s). Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Chemistry, Multidisciplinary
Svetlana A. Kadinskaya, Valeriy M. Kondratev, Ivan K. Kindyushov, Olga Yu. Koval, Dmitry I. Yakubovsky, Alexey Kusnetsov, Alexey I. Lihachev, Alexey V. Nashchekin, Irina Kh. Akopyan, Alexey Yu. Serov, Mariana E. Labzovskaya, Sergey V. Mikushev, Boris V. Novikov, Igor V. Shtrom, Alexey D. Bolshakov
Summary: In this study, ZnO nanostructures with various geometries were grown via hydrothermal synthesis using different surfactants. Photoluminescence spectroscopy was used to study their optical properties, showing that the growth medium composition had a significant impact on the emission characteristics. Therefore, this research revealed the correlation between hydrothermal growth conditions and the optical properties of ZnO nanostructures, opening up new possibilities for their precise control and application in nanophotonics, UV-Vis, and white light sources.
Article
Materials Science, Multidisciplinary
Katarzyna Gwozdz, Vladimir Kolkovsky
Summary: The electrical properties of Fe-related defects in hydrogenated n- and p-type Si doped with iron during crystal growth were investigated. Different DLTS peaks were observed and compared with previous research. Depth profiling showed that E125(FeH) only contains one H atom.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Instruments & Instrumentation
Jian Li
Summary: The method presented in this study is based on the fundamental temperature-rate duality relationship and extracts E-a and nu (0) by matching the curvatures of Arrhenius-transformed spectra from different scans in the 2D temperature-rate plane. This extraction can be done in a small temperature range and effectively resolves the values and temperature dependence of E-a and nu (0) at any given temperature point.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2021)
Article
Materials Science, Multidisciplinary
Leopold Scheffler, Anders Lei, Sune Duun, Brian Julsgaard
Summary: Defect states in nitrogen-containing float-zone silicon are investigated using DLTS and MCTS in both n- and p-type materials. The study maps the defect landscape in the entire electronic bandgap and examines whether the properties of defects differ based on the semiconductor type. The E1/E2 pair and the E4/E6 pair are studied, with no evidence found for dependency of defect properties on the semiconductor type.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Zixuan Feng, Yuxuan Zhang, Lingyu Meng, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel
Summary: This study evaluates the defect state distribution in beta phase gallium oxide (beta-Ga2O3) grown by low-pressure chemical vapor deposition (LPCVD). The presence of a previously unreported defect state and other known defect states were observed. The trap concentration in the LPCVD-grown material was lower compared to materials grown by other methods, and the distribution of the defect states showed little dependence on the SiCl4 flow rate and doping concentration. These findings indicate that LPCVD-grown beta-Ga2O3 has great potential for producing thick, low-defect density, and high-quality layers for multi-kV device applications.
Article
Chemistry, Physical
Ridha Hamdi
Summary: In this study, three fluorinated compounds with different chain lengths were synthesized and studied using various analytical techniques. The thermal, phase, and dielectric properties of the compounds were investigated, and other metric parameters were calculated and discussed.
JOURNAL OF MOLECULAR LIQUIDS
(2022)
Article
Engineering, Electrical & Electronic
J. Plesiewicz, P. Kruszewski, V. P. Markevich, P. Prystawko, S. Bulka, M. Hallsal, I. Crowe, L. Sun, A. R. Peaker
Summary: The results of junction spectroscopy measurements on deep-level defects in MOVPE n-GaN samples subjected to 1.5 MeV electron irradiation are compared with published results for epi-GaN materials grown by other techniques. Two new electron traps, EE1 and EE2, are introduced by 1.5-MeV electron irradiation, with electronic levels at about 0.14 and 0.98 eV below the conduction band edge. The EE1 trap exhibits a strong electric field dependence and its activation energy can be lowered by a strong electric field. The complexity of the EE1 trap level structure is revealed through DLTS measurements.
MICROELECTRONIC ENGINEERING
(2023)
Article
Chemistry, Multidisciplinary
Xiaodong Ren, Bobo Zhang, Lu Zhang, Jialun Wen, Bo Che, Dongliang Bai, Jiaxue You, Tao Chen, Shengzhong (Frank) Liu
Summary: Most studies choose passivators in a trial-and-error fashion to achieve high efficiency in perovskite solar cells. By using DLTS measurements, the type of defects in perovskite films was determined and a passivator was selected to improve efficiency. This work provides a new means to select the best passivator for different types of defects in PSCs.
Article
Green & Sustainable Science & Technology
Thi Nghi Nhan Nguyen, Kao-Shuo Chang
Summary: This paper reports a facile hydrothermal method for fabricating p-BiFeO3 (BFO)-n-ZnO composite films on tin-doped indium oxide substrates, and tuning various functional properties of single-crystalline BFO and ZnO to enhance piezoelectricity for multiapplications.
Article
Engineering, Electrical & Electronic
Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin Sui, Ruohan Zhang, Junmin Zhou, Xing Lu, Xinbo Zou
Summary: The properties of a minority carrier (hole) trap in ss-Ga2O3 have been investigated using a NiO/ss-Ga2O3 p-n heterojunction. The activation energy for emission and the hole capture cross section were determined to be 0.10 eV and 2.48 x 10(-15) cm(2), respectively. Temperature-enhanced capture and emission kinetics were observed, and it was found that the emission process of the minority carrier trap is independent of the electric field.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Ruchi Singh, Ritesh Bhardwaj, Gaurav Siddharth, Pawan Kumar, Shaibal Mukherjee
Summary: The study demonstrates that in ZnO-based homojunction p-i-n UV photodetectors, increasing the thickness of the top p-type layer leads to a decrease in peak responsivity, while increasing the thickness of the i-ZnO layer results in an increase in responsivity. Additionally, replacing the p-type layer material can significantly improve responsivity and dark current performance.
IEEE SENSORS JOURNAL
(2021)
Article
Spectroscopy
Kelly S. Wilson, Zachary S. Walbrun, Cathy Y. Wong
Summary: Single-shot transient absorption (SSTA) spectroscopy is a novel technique that enables efficient and stable measurement of systems undergoing irreversible processes. By encoding time delay into the probe beam, SSTA allows for accurate characterization of unstable systems that cannot be addressed using typical TA instruments.
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY
(2021)
Article
Nuclear Science & Technology
Junesic Park, Byung-Gun Park, Hani Baek, Gwang-Min Sun
Summary: The study investigated the dependence of the electrical characteristics on the fast neutron fluence of an epitaxial 4H-SiC Schottky barrier diode (SBD). The 30 MeV cyclotron was used for fast neutron irradiation. Current-voltage and capacitance-voltage measurements were performed to characterize the samples, and neutron-induced defects in the epitaxial layer were identified and quantified. The concentration of the Z1/2 defects increased by approximately 20 times as the neutron fluence increased.
NUCLEAR ENGINEERING AND TECHNOLOGY
(2023)
Review
Crystallography
Krystyna A. Deresz, Piotr Laski, Radoslaw Kaminski, Katarzyna N. Jarzembska
Summary: This review provides an overview of methods for tracing photoexcitation processes and structural dynamics in the solid state, with a focus on X-ray diffraction techniques. The recent developments and experimental possibilities in the field are discussed, along with data processing and analysis approaches, and illustrated with examples of successful studies. Additionally, selected complementary methods such as ultrafast electron diffraction or time-resolved X-ray absorption spectroscopy are briefly presented.
Article
Physics, Applied
L. Scheffler, Vl. Kolkovsky, J. Weber
JOURNAL OF APPLIED PHYSICS
(2015)
Article
Physics, Applied
L. Scheffler, Vi. Kolkovsky, J. Weber
JOURNAL OF APPLIED PHYSICS
(2015)
Article
Physics, Applied
R. Stuebner, L. Scheffler, Vl. Kolkovsky, J. Weber
JOURNAL OF APPLIED PHYSICS
(2016)
Article
Materials Science, Multidisciplinary
Ievgen Boturchuk, Leopold Scheffler, Arne Nylandsted Larsen, Brian Julsgaard
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2018)
Article
Nanoscience & Nanotechnology
L. Scheffler, M. J. Haastrup, S. Roesgaard, J. L. Hansen, A. Nylandsted Larsen, B. Julsgaard
Article
Physics, Applied
T. Mchedlidze, L. Scheffler, J. Weber, M. Herms, J. Neusel, V. Osinniy, C. Moeller, K. Lauer
APPLIED PHYSICS LETTERS
(2013)
Article
Physics, Applied
L. Scheffler, Vl Kolkovsky, J. Weber
JOURNAL OF APPLIED PHYSICS
(2013)
Article
Physics, Applied
L. Scheffler, Vl. Kolkovsky, J. Weber
JOURNAL OF APPLIED PHYSICS
(2014)
Article
Physics, Condensed Matter
Vl. Kolkovsky, L. Scheffler, J. Weber
PHYSICA B-CONDENSED MATTER
(2014)
Article
Nanoscience & Nanotechnology
Ievgen Boturchuk, Leopold Scheffler, Arne Nylandsted Larsen, Brian Julsgaard
Article
Physics, Applied
L. Scheffler, S. Roesgaard, J. L. Hansen, A. Nylandsted Larsen, B. Julsgaard
JOURNAL OF APPLIED PHYSICS
(2019)
Article
Nanoscience & Nanotechnology
L. Scheffler, A. Lei, S. Duun, B. Julsgaard
Summary: This study investigates the defects in n-type float-zone silicon grown in a nitrogen atmosphere, and their nature and origin are studied using deep level transient spectroscopy (DLTS). Four dominant DLTS peaks are identified, and their activation energies are determined. The impact of nitrogen content and polysilicon feed stock type is also analyzed. The findings provide insights into the properties of these defects and their roles in semiconductor devices.
Proceedings Paper
Physics, Applied
Ronald Stuebner, Vladimir Kolkovsky, Leopold Scheffler, Joerg Weber
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 10-12
(2016)
Proceedings Paper
Physics, Applied
Joerg Weber, Leopold Scheffler, Vladimir Kolkovski, Nikolai Yarykin
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV
(2014)
Proceedings Paper
Materials Science, Multidisciplinary
Vladimir Kolkovsky, Leopold Scheffler, Joerg Weber
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11
(2012)
