标题
Effect of strain on the thermoelectric properties of silicon: anab initiostudy
作者
关键词
-
出版物
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 23, Issue 29, Pages 295502
出版商
IOP Publishing
发表日期
2011-07-09
DOI
10.1088/0953-8984/23/29/295502
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Electronic structure and thermoelectric properties of Sb-based semiconducting half-Heusler compounds
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