Generalized lucky-drift model for impact ionization in semiconductors with disorder

标题
Generalized lucky-drift model for impact ionization in semiconductors with disorder
作者
关键词
-
出版物
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 23, Issue 5, Pages 055802
出版商
IOP Publishing
发表日期
2011-01-14
DOI
10.1088/0953-8984/23/5/055802

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More